Grain boundary analysis of Lu-doped Al2O3 by EDS and EELS

H. Yoshida, Y. Ikuhara, T. Sakuma

    Research output: Contribution to journalArticle

    Abstract

    High-temperature mechanical property in ceramics is directly related to the atomic structure and the chemical bonding strength in the grain boundaries. Transmission electron microscopy is a powerful tool to characterize the grain boundary structure. In this paper, the atomic structure and chemical bonding state at the grain boundaries in 0.05 mol%Lu2O3-doped Al2O3 polycrystalline, which shows an excellent high-temperature creep resistance, was investigated by high-resolution electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). In addition, a first principle molecular orbital calculation (MO) was made to examine the unoccupied density of states and chemical bonding state at the grain boundary.

    Original languageEnglish
    Pages (from-to)356-360
    Number of pages5
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Volume65
    Issue number5
    DOIs
    Publication statusPublished - 2001 Jan 1

    Keywords

    • AlO
    • Electron energy-loss spectroscopy (EELS)
    • Energy dispersive X-ray spectroscopy (EDS)
    • Grain boundary
    • High-resolution microscopy (HREM)
    • High-temperature creep
    • Molecular orbital calculation (MO)
    • Segregation

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Mechanics of Materials
    • Metals and Alloys
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Grain boundary analysis of Lu-doped Al<sub>2</sub>O<sub>3</sub> by EDS and EELS'. Together they form a unique fingerprint.

  • Cite this