Grain boundary analysis in superplastic sio2 - doped TZP

P. Thavorniti, Y. Ikuhara, T. Sakuma

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Detailed grain boundary analysis in superplastic SiO2-doped tetragonal zirconia polycrystal (TZP) is performed using high-resolution electron microscopy (HREM) and energy-dispersive X-ray spectroscopy (EDS). As a reference, high - purity TZP is also investigated. In SiO2 - doped TZP, an amorphous SiO2 phase is present only in grain junctions and not in the grain boundary faces. But it is found that Si4+ ions are distributed along gram boundaries with thickness of several nanometers. Y3+ ions are segregated in grain boundaries in SiO2 - doped TZP as well as high - purity TZP. The ductility enhancement in SiO2 - doped TZP must be understood from the detailed knowledge on grain boundary structure and chemistry.

Original languageEnglish
Pages (from-to)367-372
Number of pages6
JournalMaterials Science Forum
Volume233-234
Publication statusPublished - 1997 Jan 1
Externally publishedYes

Keywords

  • Field Emission TEM
  • Glass Phase
  • Grain Boundary
  • High-Resolution Electron Microscopy
  • Segregation
  • Superplasticity
  • TZP

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Thavorniti, P., Ikuhara, Y., & Sakuma, T. (1997). Grain boundary analysis in superplastic sio2 - doped TZP. Materials Science Forum, 233-234, 367-372.