Abstract
Detailed grain boundary analysis in superplastic SiO2-doped tetragonal zirconia polycrystal (TZP) is performed using high-resolution electron microscopy (HREM) and energy-dispersive X-ray spectroscopy (EDS). As a reference, high - purity TZP is also investigated. In SiO2 - doped TZP, an amorphous SiO2 phase is present only in grain junctions and not in the grain boundary faces. But it is found that Si4+ ions are distributed along gram boundaries with thickness of several nanometers. Y3+ ions are segregated in grain boundaries in SiO2 - doped TZP as well as high - purity TZP. The ductility enhancement in SiO2 - doped TZP must be understood from the detailed knowledge on grain boundary structure and chemistry.
| Original language | English |
|---|---|
| Pages (from-to) | 367-372 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 233-234 |
| Publication status | Published - 1997 Jan 1 |
| Externally published | Yes |
Keywords
- Field Emission TEM
- Glass Phase
- Grain Boundary
- High-Resolution Electron Microscopy
- Segregation
- Superplasticity
- TZP
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Thavorniti, P., Ikuhara, Y., & Sakuma, T. (1997). Grain boundary analysis in superplastic sio2 - doped TZP. Materials Science Forum, 233-234, 367-372.