Grain boundary analysis and superplastic characteristics in GeO2-doped TZP

J. Mimurada; K. Sasaki; Y. Ikuhara; T. Sakuma

Grain boundary analysis and superplastic characteristics in GeO₂-doped TZP

J. Mimurada, K. Sasaki, Y. Ikuhara, T. Sakuma

Research output: Contribution to journal › Conference article

Abstract

TEM observations in TZP-1 Ge were conducted, which has improved superplasticity when compared to 2.5Y-TZP. The TEM analysis consisted of high resolution electron microscopy (HREM) and energy dispersive X-ray spectroscopy (EDS) applied to grain boundaries in TZP-1Ge. HREM image revealed that there are no amorphous at multiple junctions or at grain boundaries. EDS profiles taken from the grain boundaries in TZP-1Ge show the segregation of Ge⁴⁺ at the boundaries. This segregation of Ge⁴⁺ is considered to be caused by the relaxation in strain energy. Consequently, the flow stress reduction in TZP-1Ge results from the enhanced diffusivity which controls the superplastic deformation by the presence of Ge⁴⁺ in zirconia. The comparison of the flow stress in Si⁴⁺, Ge⁴⁺ or Ti⁴⁺ doped Y-TZP suggests that the dopants existing inside zirconia grains affect the flow stress.

Original language	English
Pages (from-to)	383-388
Number of pages	6
Journal	Key Engineering Materials
Volume	171-174
Publication status	Published - 2000 Jan 1
Event	Proceedings of the 1999 8th International Conference on Creep and Fracture of Engineering Materials and Structures - Tsukuba, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Mimurada, J., Sasaki, K., Ikuhara, Y., & Sakuma, T. (2000). Grain boundary analysis and superplastic characteristics in GeO₂-doped TZP. Key Engineering Materials, 171-174, 383-388.

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title = "Grain boundary analysis and superplastic characteristics in GeO2-doped TZP",

abstract = "TEM observations in TZP-1 Ge were conducted, which has improved superplasticity when compared to 2.5Y-TZP. The TEM analysis consisted of high resolution electron microscopy (HREM) and energy dispersive X-ray spectroscopy (EDS) applied to grain boundaries in TZP-1Ge. HREM image revealed that there are no amorphous at multiple junctions or at grain boundaries. EDS profiles taken from the grain boundaries in TZP-1Ge show the segregation of Ge4+ at the boundaries. This segregation of Ge4+ is considered to be caused by the relaxation in strain energy. Consequently, the flow stress reduction in TZP-1Ge results from the enhanced diffusivity which controls the superplastic deformation by the presence of Ge4+ in zirconia. The comparison of the flow stress in Si4+, Ge4+ or Ti4+ doped Y-TZP suggests that the dopants existing inside zirconia grains affect the flow stress.",

author = "J. Mimurada and K. Sasaki and Y. Ikuhara and T. Sakuma",

year = "2000",

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pages = "383--388",

journal = "Key Engineering Materials",

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TY - JOUR

T1 - Grain boundary analysis and superplastic characteristics in GeO2-doped TZP

AU - Mimurada, J.

AU - Sasaki, K.

AU - Ikuhara, Y.

AU - Sakuma, T.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - TEM observations in TZP-1 Ge were conducted, which has improved superplasticity when compared to 2.5Y-TZP. The TEM analysis consisted of high resolution electron microscopy (HREM) and energy dispersive X-ray spectroscopy (EDS) applied to grain boundaries in TZP-1Ge. HREM image revealed that there are no amorphous at multiple junctions or at grain boundaries. EDS profiles taken from the grain boundaries in TZP-1Ge show the segregation of Ge4+ at the boundaries. This segregation of Ge4+ is considered to be caused by the relaxation in strain energy. Consequently, the flow stress reduction in TZP-1Ge results from the enhanced diffusivity which controls the superplastic deformation by the presence of Ge4+ in zirconia. The comparison of the flow stress in Si4+, Ge4+ or Ti4+ doped Y-TZP suggests that the dopants existing inside zirconia grains affect the flow stress.

AB - TEM observations in TZP-1 Ge were conducted, which has improved superplasticity when compared to 2.5Y-TZP. The TEM analysis consisted of high resolution electron microscopy (HREM) and energy dispersive X-ray spectroscopy (EDS) applied to grain boundaries in TZP-1Ge. HREM image revealed that there are no amorphous at multiple junctions or at grain boundaries. EDS profiles taken from the grain boundaries in TZP-1Ge show the segregation of Ge4+ at the boundaries. This segregation of Ge4+ is considered to be caused by the relaxation in strain energy. Consequently, the flow stress reduction in TZP-1Ge results from the enhanced diffusivity which controls the superplastic deformation by the presence of Ge4+ in zirconia. The comparison of the flow stress in Si4+, Ge4+ or Ti4+ doped Y-TZP suggests that the dopants existing inside zirconia grains affect the flow stress.

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