Abstract
TEM observations in TZP-1 Ge were conducted, which has improved superplasticity when compared to 2.5Y-TZP. The TEM analysis consisted of high resolution electron microscopy (HREM) and energy dispersive X-ray spectroscopy (EDS) applied to grain boundaries in TZP-1Ge. HREM image revealed that there are no amorphous at multiple junctions or at grain boundaries. EDS profiles taken from the grain boundaries in TZP-1Ge show the segregation of Ge4+ at the boundaries. This segregation of Ge4+ is considered to be caused by the relaxation in strain energy. Consequently, the flow stress reduction in TZP-1Ge results from the enhanced diffusivity which controls the superplastic deformation by the presence of Ge4+ in zirconia. The comparison of the flow stress in Si4+, Ge4+ or Ti4+ doped Y-TZP suggests that the dopants existing inside zirconia grains affect the flow stress.
Original language | English |
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Pages (from-to) | 383-388 |
Number of pages | 6 |
Journal | Key Engineering Materials |
Volume | 171-174 |
Publication status | Published - 2000 Jan 1 |
Event | Proceedings of the 1999 8th International Conference on Creep and Fracture of Engineering Materials and Structures - Tsukuba, Jpn Duration: 1999 Nov 1 → 1999 Nov 5 |
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering