Grain boundaries characterization of semiconducting BaSi2 thin films on a polycrystalline Si substrate

Masakazu Baba, Kosuke O. Hara, Kentaro Watanabe, Weijie Du, Daichi Tsukahara, Kaoru Toko, Karolin Jiptner, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Grain boundaries (GBs) and crystalline quality of semiconducting BaSi2 films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi2 was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential varied from place to place. At the GBs of Si, there was not so much difference in potential variations compared to GBs in BaSi2 formed on single crystalline Si(111). The barrier height was approximately 20-40 meV for holes. The GBs of BaSi2 around Σ3 GBs of Si don't work as recombination center for minority carriers.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages206-208
Number of pages3
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - 2014 Oct 15
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 2014 Jun 82014 Jun 13

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period14/6/814/6/13

Keywords

  • KFM
  • MBE
  • epitaxy
  • grain boundary
  • silicide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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