Grain boundaries characterization of semiconducting BaSi2 thin films on a polycrystalline Si substrate

Masakazu Baba; Kosuke O. Hara; Kentaro Watanabe; Weijie Du; Daichi Tsukahara; Kaoru Toko; Karolin Jiptner; Takashi Sekiguchi; Noritaka Usami; Takashi Suemasu

doi:10.1109/PVSC.2014.6925584

Grain boundaries characterization of semiconducting BaSi₂ thin films on a polycrystalline Si substrate

Masakazu Baba, Kosuke O. Hara, Kentaro Watanabe, Weijie Du, Daichi Tsukahara, Kaoru Toko, Karolin Jiptner, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Grain boundaries (GBs) and crystalline quality of semiconducting BaSi₂ films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi₂ was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential varied from place to place. At the GBs of Si, there was not so much difference in potential variations compared to GBs in BaSi₂ formed on single crystalline Si(111). The barrier height was approximately 20-40 meV for holes. The GBs of BaSi₂ around Σ3 GBs of Si don't work as recombination center for minority carriers.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	206-208
Number of pages	3
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925584
Publication status	Published - 2014 Oct 15
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 2014 Jun 8 → 2014 Jun 13

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country	United States
City	Denver
Period	14/6/8 → 14/6/13

Keywords

KFM
MBE
epitaxy
grain boundary
silicide

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925584

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Cite this

Baba, M., Hara, K. O., Watanabe, K., Du, W., Tsukahara, D., Toko, K., Jiptner, K., Sekiguchi, T., Usami, N., & Suemasu, T. (2014). Grain boundaries characterization of semiconducting BaSi₂ thin films on a polycrystalline Si substrate. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 206-208). [6925584] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925584

Grain boundaries characterization of semiconducting BaSi₂ thin films on a polycrystalline Si substrate. / Baba, Masakazu; Hara, Kosuke O.; Watanabe, Kentaro; Du, Weijie; Tsukahara, Daichi; Toko, Kaoru; Jiptner, Karolin; Sekiguchi, Takashi; Usami, Noritaka; Suemasu, Takashi.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 206-208 6925584 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Baba, M, Hara, KO, Watanabe, K, Du, W, Tsukahara, D, Toko, K, Jiptner, K, Sekiguchi, T, Usami, N & Suemasu, T 2014, Grain boundaries characterization of semiconducting BaSi₂ thin films on a polycrystalline Si substrate. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925584, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 206-208, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 14/6/8. https://doi.org/10.1109/PVSC.2014.6925584

Baba M, Hara KO, Watanabe K, Du W, Tsukahara D, Toko K et al. Grain boundaries characterization of semiconducting BaSi₂ thin films on a polycrystalline Si substrate. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 206-208. 6925584. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). https://doi.org/10.1109/PVSC.2014.6925584

Baba, Masakazu ; Hara, Kosuke O. ; Watanabe, Kentaro ; Du, Weijie ; Tsukahara, Daichi ; Toko, Kaoru ; Jiptner, Karolin ; Sekiguchi, Takashi ; Usami, Noritaka ; Suemasu, Takashi. / Grain boundaries characterization of semiconducting BaSi₂ thin films on a polycrystalline Si substrate. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 206-208 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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abstract = "Grain boundaries (GBs) and crystalline quality of semiconducting BaSi2 films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi2 was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential varied from place to place. At the GBs of Si, there was not so much difference in potential variations compared to GBs in BaSi2 formed on single crystalline Si(111). The barrier height was approximately 20-40 meV for holes. The GBs of BaSi2 around Σ3 GBs of Si don't work as recombination center for minority carriers.",

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author = "Masakazu Baba and Hara, {Kosuke O.} and Kentaro Watanabe and Weijie Du and Daichi Tsukahara and Kaoru Toko and Karolin Jiptner and Takashi Sekiguchi and Noritaka Usami and Takashi Suemasu",

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AU - Baba, Masakazu

AU - Hara, Kosuke O.

AU - Watanabe, Kentaro

AU - Du, Weijie

AU - Tsukahara, Daichi

AU - Toko, Kaoru

AU - Jiptner, Karolin

AU - Sekiguchi, Takashi

AU - Usami, Noritaka

AU - Suemasu, Takashi

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N2 - Grain boundaries (GBs) and crystalline quality of semiconducting BaSi2 films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi2 was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential varied from place to place. At the GBs of Si, there was not so much difference in potential variations compared to GBs in BaSi2 formed on single crystalline Si(111). The barrier height was approximately 20-40 meV for holes. The GBs of BaSi2 around Σ3 GBs of Si don't work as recombination center for minority carriers.

AB - Grain boundaries (GBs) and crystalline quality of semiconducting BaSi2 films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi2 was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential varied from place to place. At the GBs of Si, there was not so much difference in potential variations compared to GBs in BaSi2 formed on single crystalline Si(111). The barrier height was approximately 20-40 meV for holes. The GBs of BaSi2 around Σ3 GBs of Si don't work as recombination center for minority carriers.

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KW - epitaxy

KW - grain boundary

KW - silicide

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