@inproceedings{87a2fec702154c8ea8e4bb9c4bac509d,
title = "Grain boundaries characterization of semiconducting BaSi2 thin films on a polycrystalline Si substrate",
abstract = "Grain boundaries (GBs) and crystalline quality of semiconducting BaSi2 films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi2 was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential varied from place to place. At the GBs of Si, there was not so much difference in potential variations compared to GBs in BaSi2 formed on single crystalline Si(111). The barrier height was approximately 20-40 meV for holes. The GBs of BaSi2 around Σ3 GBs of Si don't work as recombination center for minority carriers.",
keywords = "KFM, MBE, epitaxy, grain boundary, silicide",
author = "Masakazu Baba and Hara, {Kosuke O.} and Kentaro Watanabe and Weijie Du and Daichi Tsukahara and Kaoru Toko and Karolin Jiptner and Takashi Sekiguchi and Noritaka Usami and Takashi Suemasu",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925584",
language = "English",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "206--208",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
}