Graded composition and valence states in self-forming barrier layers at Cu-Mn/ SiO2 interface

Y. Otsuka; J. Koike; H. Sako; K. Ishibashi; N. Kawasaki; S. M. Chung; I. Tanaka

doi:10.1063/1.3269602

Graded composition and valence states in self-forming barrier layers at Cu-Mn/ SiO₂ interface

Y. Otsuka, J. Koike, H. Sako, K. Ishibashi, N. Kawasaki, S. M. Chung, I. Tanaka

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

A self-forming diffusion barrier (SFB) layer was formed at Cu-Mn/ SiO ₂ interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron microscopy. The SFB was found to have a layered structure with graded compositions of nanocrystalline MnO and amorphous MnSiO₃. The valence state of Mn was found to be +2 in the MnO layer and gradually increased to +3 in the MnSiO₃ layer. The reported dielectric constant of the SFB could be explained by the observed composition and microstructure.

Original language	English
Article number	012101
Journal	Applied Physics Letters
Volume	96
Issue number	1
DOIs	https://doi.org/10.1063/1.3269602
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3269602

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abstract = "A self-forming diffusion barrier (SFB) layer was formed at Cu-Mn/ SiO 2 interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron microscopy. The SFB was found to have a layered structure with graded compositions of nanocrystalline MnO and amorphous MnSiO3. The valence state of Mn was found to be +2 in the MnO layer and gradually increased to +3 in the MnSiO3 layer. The reported dielectric constant of the SFB could be explained by the observed composition and microstructure.",

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T1 - Graded composition and valence states in self-forming barrier layers at Cu-Mn/ SiO2 interface

AU - Otsuka, Y.

AU - Koike, J.

AU - Sako, H.

AU - Ishibashi, K.

AU - Kawasaki, N.

AU - Chung, S. M.

AU - Tanaka, I.

PY - 2010

Y1 - 2010

N2 - A self-forming diffusion barrier (SFB) layer was formed at Cu-Mn/ SiO 2 interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron microscopy. The SFB was found to have a layered structure with graded compositions of nanocrystalline MnO and amorphous MnSiO3. The valence state of Mn was found to be +2 in the MnO layer and gradually increased to +3 in the MnSiO3 layer. The reported dielectric constant of the SFB could be explained by the observed composition and microstructure.

AB - A self-forming diffusion barrier (SFB) layer was formed at Cu-Mn/ SiO 2 interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron microscopy. The SFB was found to have a layered structure with graded compositions of nanocrystalline MnO and amorphous MnSiO3. The valence state of Mn was found to be +2 in the MnO layer and gradually increased to +3 in the MnSiO3 layer. The reported dielectric constant of the SFB could be explained by the observed composition and microstructure.

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Graded composition and valence states in self-forming barrier layers at Cu-Mn/ SiO₂ interface

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