Good conformability of indium-tin oxide thin films prepared by spray chemical vapor deposition

Takeshi Kondo, Yutaka Sawada, Hiroshi Funakubo, Kensuke Akiyama, Takanori Kiguchi, Meihan Wang, Takayuki Uchida

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Tin-doped In2 O3 (indium-tin oxide, ITO) transparent conducting films were deposited between 200 and 400°C on stripe-patterned Si substrates by spray chemical vapor deposition. ITO films with a homogeneous tin composition and crystallinity were successfully fabricated. The step coverage increased as the deposition temperature decreased and reached 90% at 200°C. Postdeposition annealing lowered the resistivity to 3.3× 10-4 cm, which is approximately homogeneous because the measured resistance agreed well with the calculated one assuming the resistivity value of the film deposited on a flat surface and considering the film thickness of various portions. These films should contribute to optoelectric devices.

Original languageEnglish
Pages (from-to)D42-D44
JournalElectrochemical and Solid-State Letters
Volume12
Issue number5
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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