Gold Penetration Correlated with Selective Oxidation of Silicon in Fe-3 mass%Si Single Crystal

Shigeru Suzuki, Katsuyuki Yanagihara, Shuichi Yamazaki, Yoshio Waseda

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Secondary ion mass spectrometry (SIMS) has been used for characterizing penetration of gold, which was deposited on the surface of Fe-3 mass%Si (011) single crystal and subsequently penetrated into its bulk by annealing under the low partial pressure of oxygen. The degree of gold penetration was evaluated using an effective diffusion coefficient of gold in Fe-3 mass%Si, which was apparently estimated from a SIMS depth profile. The effective diffusion coefficients of gold in the surface layer of Fe-3 mass%Si were found to be larger than those in the bulk iron. The gold penetration is likely to be correlated with the distribution of silicon oxides, which is formed by selective oxidation of silicon in the surface layer of Fe-3 mass%Si. This indicates that silicon oxides formed in the surface layer of Fe-3 mass%Si act as a path for the gold penetration, which is presumably the interface between the iron matrix and a network of silicon oxides.

Original languageEnglish
Pages (from-to)1655-1658
Number of pages4
JournalMaterials Transactions
Volume44
Issue number9
DOIs
Publication statusPublished - 2003 Sep

Keywords

  • Depth profiling; secondary ion mass spectrometry
  • Diffusion; gold
  • Segregation
  • Selective oxidation
  • Silicon steel
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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