GIXS/AES study of polycrystalline titanium and titanium oxide films sputtered on Si substrate

S. Suzuki, T. Kosaka, Shigeo Sato, M. Saito, E. Matsubara, Y. Waseda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Grazing incidence X-ray scattering (GIXS) and Auger electron spectroscopy (AES) have been used for characterizing thin polycrystalline titanium and titanium oxide films sputtered on silicon wafers. The critical angle in X-ray reflection curves indicates that the density of sputtered TiOx/Si is higher than the titanium bulk value. The values of thickness of these thin films estimated from a comparison with calculated reflection curves were in good agreement with those obtained by a surface thickness profiler. Diffraction patterns in both GIXS and Seemanu-Bohlin geometries show that Ti/Si and TiOx/Si, which are identified as Ti and Ti2O3, respectively, are oriented to the c-axis. The compositional homogeneity through the films of Ti/Si and TiOx/Si has been recognized by the AES depth profiles.

Original languageEnglish
Pages (from-to)193-199
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume161
Issue number1
DOIs
Publication statusPublished - 1997 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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