Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications

Shinji Yuasa, Rie Matsumoto, Akio Fukushima, Hitoshi Kubota, Taro Nagahama, David D. Djayaprawira, Koji Tsunekawa, Hiroki Maehara, Yoshinori Nagamine, Motonobu Nagai, Shinji Yamagata, Yoshishige Suzuki, Masaki Mizuguchi, Alina M. Deac, Koji Ando

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxial Fe-Co(001)/MgO(001)/Fe-Co(001) MTJs and textured CoFeB/MgO(001)/CoFeB MTJs and achieved giant MR ratios above 400% at room temperature. An ultra-low resistance-area (RA) product indispensable for magnetic sensor application has also been achieved in CoFeB/MgO(001)/CoFeB MTJs. The giant TMR effect in MgO-based MTJs is the key for next-generation spintronic devices.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages186-187
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Magnetic tunnel junction
  • Magnetoresistance
  • MgO
  • Spintronics
  • Tunneling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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