Giant tunneling magnetoresistance in Co2MnSi/Al-O /Co 2MnSi magnetic tunnel junctions

Y. Sakuraba, M. Hattori, M. Oogane, Y. Ando, H. Kato, A. Sakuma, T. Miyazaki, H. Kubota

Research output: Contribution to journalArticlepeer-review

498 Citations (Scopus)


Magnetic tunnel junctions (MTJs) with a stacking structure of Co2 MnSiAl-O Co2 MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al-O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2 MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.

Original languageEnglish
Article number192508
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Giant tunneling magnetoresistance in Co2MnSi/Al-O /Co 2MnSi magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this