@article{896c714de6034808bd0acb9710b7908b,
title = "Giant tunneling magnetoresistance in Co2MnSi/Al-O /Co 2MnSi magnetic tunnel junctions",
abstract = "Magnetic tunnel junctions (MTJs) with a stacking structure of Co2 MnSiAl-O Co2 MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al-O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2 MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.",
author = "Y. Sakuraba and M. Hattori and M. Oogane and Y. Ando and H. Kato and A. Sakuma and T. Miyazaki and H. Kubota",
note = "Funding Information: The authors give special thanks to Dr. S. Yuasa of the Japanese National Institute of Advanced Industrial Science and Technology (AIST) for helpful discussion and advice. This study was supported by the IT Program of the Research Revolution 2002 (RR2002) under the title “Development of Universal Low-Power Spin Memory,” by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, by the Core Research for Evolutional Science and Technology (CREST) program of the Japan Science and Technology (JST) Corporation, by the New Energy and Industrial Technology Development Organization (NEDO) grant program, and by a Japan Society for the Promotion of Science (JSPS) Research Fellowship for Young Scientists. ",
year = "2006",
doi = "10.1063/1.2202724",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",
}