Giant plasmon instability in a dual-grating-gate graphene field-effect transistor

Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, A. Satou

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We study the instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with a terahertz/midinfrared range of the frequency, can exceed 4×1012s-1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on the usual semiconductors. By comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from a simultaneous occurrence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

Original languageEnglish
Article number245408
JournalPhysical Review B
Volume93
Issue number24
DOIs
Publication statusPublished - 2016 Jun 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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