Abstract
We have studied the transport and magnetic properties of Ga1-xMnxAs/GaAs with different Mn content (0.015 < x < 0.071). In these magnetic semiconductors, the exchange interaction between the carriers and the localized magnetic moments leads to unique transport properties. In this paper, we discuss an insulator-metal-insulator transition and a giant negative magnetoresistance observed in the vicinity of the metal-insulator transitions.
| Original language | English |
|---|---|
| Pages (from-to) | 167-171 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 205 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1998 Jan |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Oiwa, A., Katsumoto, S., Endo, A., Hirasawa, M., Iye, Y., Ohno, H., Matsukura, F., Shen, A., & Sugawara, Y. (1998). Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal-Insulator Transition. Physica Status Solidi (B) Basic Research, 205(1), 167-171. https://doi.org/10.1002/(SICI)1521-3951(199801)205:1<167::AID-PSSB167>3.0.CO;2-O