TY - JOUR
T1 - Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal-Insulator Transition
AU - Oiwa, A.
AU - Katsumoto, S.
AU - Endo, A.
AU - Hirasawa, M.
AU - Iye, Y.
AU - Ohno, H.
AU - Matsukura, F.
AU - Shen, A.
AU - Sugawara, Y.
PY - 1998/1
Y1 - 1998/1
N2 - We have studied the transport and magnetic properties of Ga1-xMnxAs/GaAs with different Mn content (0.015 < x < 0.071). In these magnetic semiconductors, the exchange interaction between the carriers and the localized magnetic moments leads to unique transport properties. In this paper, we discuss an insulator-metal-insulator transition and a giant negative magnetoresistance observed in the vicinity of the metal-insulator transitions.
AB - We have studied the transport and magnetic properties of Ga1-xMnxAs/GaAs with different Mn content (0.015 < x < 0.071). In these magnetic semiconductors, the exchange interaction between the carriers and the localized magnetic moments leads to unique transport properties. In this paper, we discuss an insulator-metal-insulator transition and a giant negative magnetoresistance observed in the vicinity of the metal-insulator transitions.
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U2 - 10.1002/(SICI)1521-3951(199801)205:1<167::AID-PSSB167>3.0.CO;2-O
DO - 10.1002/(SICI)1521-3951(199801)205:1<167::AID-PSSB167>3.0.CO;2-O
M3 - Article
AN - SCOPUS:0032331050
VL - 205
SP - 167
EP - 171
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 1
ER -