Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

S. Sant, M. Mao, J. Kools, K. Koi, H. Iwasaki, M. Sahashi

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)


Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

Original languageEnglish
Pages (from-to)6931-6933
Number of pages3
JournalJournal of Applied Physics
Issue number11 II
Publication statusPublished - 2001 Jun 1
Externally publishedYes
Event8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
Duration: 2001 Jan 72001 Jan 11

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement'. Together they form a unique fingerprint.

Cite this