Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

S. Sant; M. Mao; J. Kools; K. Koi; H. Iwasaki; M. Sahashi

doi:10.1063/1.1356718

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

S. Sant, M. Mao, J. Kools, K. Koi, H. Iwasaki, M. Sahashi

Research output: Contribution to journal › Conference article › peer-review

22 Citations (Scopus)

Abstract

Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

Original language	English
Pages (from-to)	6931-6933
Number of pages	3
Journal	Journal of Applied Physics
Volume	89
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1356718
Publication status	Published - 2001 Jun 1
Externally published	Yes
Event	8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: 2001 Jan 7 → 2001 Jan 11

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1356718

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title = "Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement",

abstract = "Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.",

author = "S. Sant and M. Mao and J. Kools and K. Koi and H. Iwasaki and M. Sahashi",

year = "2001",

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doi = "10.1063/1.1356718",

language = "English",

volume = "89",

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journal = "Journal of Applied Physics",

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note = "8th Joint Magnetism and Magnetic Materials-Intermag Conference ; Conference date: 07-01-2001 Through 11-01-2001",

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TY - JOUR

T1 - Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

AU - Sant, S.

AU - Mao, M.

AU - Kools, J.

AU - Koi, K.

AU - Iwasaki, H.

AU - Sahashi, M.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

AB - Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11 II

T2 - 8th Joint Magnetism and Magnetic Materials-Intermag Conference

Y2 - 7 January 2001 through 11 January 2001

ER -

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

Abstract

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