Giant magnetopiezoresistance at the localized-extended electronic state transition in a high-mobility 2DEG system

H. Yamaguchi, S. Miyashita, Yoshiro Hirayama

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A high-mobility two-dimensional electron gas system with a Hall-bar geometry was integrated in a micromechanical cantilever to measure the piezoresistance, i.e., the resistance change induced by the deflection of the cantilever in the quantum Hall regime. The piezoresistance was strongly enhanced at the transition between the localized and extended states, and we obtained a piezoresistive gauge factor as large as 25,000. This "giant magnetopiezoresistance" is caused by the strong strain effect on the electronic state transition and the cantilever will lead to highly sensitive force and displacement sensors at low temperature.

Original languageEnglish
Pages (from-to)663-666
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
Publication statusPublished - 2006 May 8
Externally publishedYes
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: 2005 Sep 182005 Sep 22

ASJC Scopus subject areas

  • Condensed Matter Physics

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