Giant Enhancement of Photovoltage from InGaAs-Channel Dual-Grating-Gate HEMT THz Detector due to Nonlinear Rectification Effect at InGaAs/InAlAs Heterobarrier

Akira Satou, Tomotaka Hosotani, Takumi Negoro, Yuma Takida, Hiromasa Ito, Hiroaki Minamide, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally demonstrate the photovoltage from an InGaAs-channel dual-grating-gate HEMT THz detector in the gate-readout configuration is significantly enhanced by the positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.

Original languageEnglish
Title of host publication2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580910
Publication statusPublished - 2021 May
Event2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: 2021 May 92021 May 14

Publication series

Name2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings

Conference

Conference2021 Conference on Lasers and Electro-Optics, CLEO 2021
Country/TerritoryUnited States
CityVirtual, Online
Period21/5/921/5/14

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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