TY - GEN
T1 - Giant Enhancement of Photovoltage from InGaAs-Channel Dual-Grating-Gate HEMT THz Detector due to Nonlinear Rectification Effect at InGaAs/InAlAs Heterobarrier
AU - Satou, Akira
AU - Hosotani, Tomotaka
AU - Negoro, Takumi
AU - Takida, Yuma
AU - Ito, Hiromasa
AU - Minamide, Hiroaki
AU - Otsuji, Taiichi
N1 - Funding Information:
This work was financially supported by JSPS KAKENHI #18K04277, #18J21073, #18H053311, and #20K20349, Japan. The authors thank NTT-AT Corp. for cooperation in processing the sample fabrication. The partial device process and SEM observation were done at the Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University, Japan.
Publisher Copyright:
© 2021 OSA.
PY - 2021/5
Y1 - 2021/5
N2 - We experimentally demonstrate the photovoltage from an InGaAs-channel dual-grating-gate HEMT THz detector in the gate-readout configuration is significantly enhanced by the positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.
AB - We experimentally demonstrate the photovoltage from an InGaAs-channel dual-grating-gate HEMT THz detector in the gate-readout configuration is significantly enhanced by the positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.
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M3 - Conference contribution
AN - SCOPUS:85120453168
T3 - 2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
BT - 2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 Conference on Lasers and Electro-Optics, CLEO 2021
Y2 - 9 May 2021 through 14 May 2021
ER -