@inproceedings{0cd2a5a983f44fac9ce6eed4962f1f9b,
title = "Giant enhancement of photovoltage from InGaAs-channel dual-grating-gate HEMT THz detector due to nonlinear rectification effect at InGaAs/InAlAs heterobarrier",
abstract = "We experimentally demonstrate the photovoltage from an InGaAs-channel dual-grating-gate HEMT THz detector in the gate-readout configuration is significantly enhanced by the positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.",
author = "Akira Satou and Tomotaka Hosotani and Takumi Negoro and Yuma Takida and Hiromasa Ito and Hiroaki Minamide and Taiichi Otsuji",
note = "Funding Information: This work was financially supported by JSPS KAKENHI #18K04277, #18J21073, #18H053311, and #20K20349, Japan. The authors thank NTT-AT Corp. for cooperation in processing the sample fabrication. The partial device process and SEM observation were done at the Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University, Japan. Publisher Copyright: {\textcopyright} OSA 2021, {\textcopyright} 2021 The Author(s); CLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 ; Conference date: 09-05-2021 Through 14-05-2021",
year = "2021",
language = "English",
series = "Optics InfoBase Conference Papers",
publisher = "The Optical Society",
booktitle = "CLEO",
address = "United States",
}