Giant enhancement of photovoltage from InGaAs-channel dual-grating-gate HEMT THz detector due to nonlinear rectification effect at InGaAs/InAlAs heterobarrier

Akira Satou, Tomotaka Hosotani, Takumi Negoro, Yuma Takida, Hiromasa Ito, Hiroaki Minamide, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally demonstrate the photovoltage from an InGaAs-channel dual-grating-gate HEMT THz detector in the gate-readout configuration is significantly enhanced by the positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO:S and I 2021
PublisherThe Optical Society
ISBN (Electronic)9781557528209
Publication statusPublished - 2021
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: 2021 May 92021 May 14

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021
Country/TerritoryUnited States
CityVirtual, Online
Period21/5/921/5/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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