Germanium-doped Czochralski silicon: A novel material for solar cells

Mukannan Arivanandhan, Gotoh Raira, Kozo Fujiwara, Satoshi Uda, Yasuhiro Hayakawa, Makoto Konagai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effect of Ge codoping on the light induced degradation (LID) of B doped Czochralski-silicon (CZ-Si) was investigated. The rate of degradation under illumination is relatively suppressed in B and Ge codoped Czochralski-silicon (CZ-Si) compared to B-doped CZ-Si. The Oi concentrations measured by FTIR spectroscopy was decreased as the Ge concentration increased in the Si crystal. The formation of Ge-VO complex in silicon lattice is considered as a possible reason for the variation in Oi. Moreover, the compressive strain field around the Ge-VO complex may increase the barrier for O diffusion which limits the formation of fast diffusing O dimmers. As a consequence, the B-O dimmer (O2i) related defects were relatively suppressed, which causes the suppression of LID effect in B and Ge codoped CZ-Si.

Original languageEnglish
Pages (from-to)1746-1749
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number12
DOIs
Publication statusPublished - 2013 Dec

Keywords

  • B and Ge codoping
  • Czochralski-silicon
  • Grown-in micro defects
  • Light induced degradation

ASJC Scopus subject areas

  • Condensed Matter Physics

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