Surfaces of Sn growing on InSb(111)\A, B have been studied by using the reflection high-energy electron-diffraction intensity oscillation technique. The surfaces proceed in the formation of a bilayered lattice in the whole range of film thickness. However, the geometry of the outermost surface layer is quite different in both systems: The growing surface on InSb(111)A smoothens with the same period as the lattice formation, whereas on InSb(111)B, below and above 6 ML of Sn, smooth surfaces emerge every period of monolayer and bilayer, respectively. The monolayer-period change in surface geometry is ascribed to Sb segregation on the growing surface.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1996 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics