Geometry and lattice formation of surface layers of Sn growing on InSb(111)\A, B

Akihiro Ohtake, Jun Nakamura, Toyoaki Eguchi, Toshiaki Osaka

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9 Citations (Scopus)

Abstract

Surfaces of Sn growing on InSb(111)\A, B have been studied by using the reflection high-energy electron-diffraction intensity oscillation technique. The surfaces proceed in the formation of a bilayered lattice in the whole range of film thickness. However, the geometry of the outermost surface layer is quite different in both systems: The growing surface on InSb(111)A smoothens with the same period as the lattice formation, whereas on InSb(111)B, below and above 6 ML of Sn, smooth surfaces emerge every period of monolayer and bilayer, respectively. The monolayer-period change in surface geometry is ascribed to Sb segregation on the growing surface.

Original languageEnglish
Pages (from-to)10358-10361
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number15
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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