Abstract
Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO2/Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.
Original language | English |
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Pages (from-to) | L539-L548 |
Journal | Fluctuation and Noise Letters |
Volume | 5 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2005 Dec |
Keywords
- 1/f noise
- Flicker noise
- Krypton
- MOSFET
- Plasma oxidation
- RTS
ASJC Scopus subject areas
- Mathematics(all)
- Physics and Astronomy(all)