Geometry and bias dependence of low-frequency Random Telegraph Signal and I/f noise levels in MOSFETS

Masato Totta, Lode K.J. Vandamme, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO2/Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.

Original languageEnglish
Pages (from-to)L539-L548
JournalFluctuation and Noise Letters
Volume5
Issue number4
DOIs
Publication statusPublished - 2005 Dec

Keywords

  • 1/f noise
  • Flicker noise
  • Krypton
  • MOSFET
  • Plasma oxidation
  • RTS

ASJC Scopus subject areas

  • Mathematics(all)
  • Physics and Astronomy(all)

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