Geometrical effect in submicrometer channel organic field effect transistors

Touichiro Goto, Hiroshi Inokawa, Keiichi Torimitsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electrical behaviors of submicrometer bottom-gate bottom-contact organic field effect transistors (OFETs) with submicrometer channel lengths and channel widths were investigated. Short-channel effects (SCEs) were observed for devices with shorter channel lengths and wider channel widths. The SCEs were effectively suppressed by reducing the channel width to 50 nm. The relationship between the drain current density and the drain voltage normalized by their respective channel lengths revealed that the drain current characteristics of shorter length channels fall into two types: parasitic contact resistances at lower drain voltage and SCEs caused by the space charge limiting current at higher drain voltages. The carrier mobility was also investigated, and found to be enhanced in the narrower channel width.

Original languageEnglish
Pages (from-to)579-582
Number of pages4
JournalThin Solid Films
Volume518
Issue number2
DOIs
Publication statusPublished - 2009 Nov 30
Externally publishedYes

Keywords

  • Carrier mobility
  • Organic field effect transistors
  • Semiconducting polymers
  • Short-channel effects
  • Threshold voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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