TY - GEN
T1 - Geometric phase analysis of nano-scale strain fields around 90° domains in PbTiO3/SrTiO3 epitaxial thin film
AU - Kiguchi, Takanori
AU - Aoyagi, Kenta
AU - Konno, Toyohiko J.
AU - Utsugi, Satoru
AU - Yamada, Tomoaki
AU - Funakubo, Hiroshi
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - The nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other, the tensile strain field and lattice plane bending fit together. This result infers that the a-domain originates from the misfit dislocation.
AB - The nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other, the tensile strain field and lattice plane bending fit together. This result infers that the a-domain originates from the misfit dislocation.
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M3 - Conference contribution
AN - SCOPUS:79952063802
SN - 9781617822001
T3 - Materials Research Society Symposium Proceedings
SP - 54
EP - 59
BT - Multiferroic and Ferroelectric Materials
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -