Geometric and electronic structures of SiO2/Si(001)interfaces

Takahiro Yamasaki, Chioko Kaneta, Toshihiro Uchiyama, Tsuyoshi Uda, Kiyoyuki Terakura

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

Interface structures of SiO2/Si(001) are studied by using the first-principles molecular-dynamics method. Three crystalline phases of the SiO2, cristobalite, quartz, and tridymite, are stacked on the Si(001) substrate and are fully relaxed. When the SiO2 layer is very thin (˜7 Å), the lowest-energy structure is the tridymite, followed by the quartz phase. As the SiO2 layer becomes thicker (˜15 Å), the quartz phase has lower energy than the tridymite phase. The cristobalite phase on Si(001) is unstable due to large lattice mismatch, and transforms into a different crystal structure. No defects appear at the interface after the successive bond breaking and rebonding, but the energy of the resulting structure is the highest irrespective of the thickness. Calculations of the local density of states show that the band-gap change occurs on the SiO2side, resulting in an effective decrease of the oxide thickness by 2–5 Å.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number11
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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