Generation of terahertz radiation from a new InGaP/InGaAs/GaAs double grating gate HEMT device

Y. M. Meziani, M. Hanabe, A. Koizumi, T. Ishibashi, T. Uno, T. Otsuji, E. Sano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We observed a generation of terahertz radiation from different grating gate devices. The devices are subjected to the CW laser and then to the impulsive laser at room temperature.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
Publication statusPublished - 2007 Dec 1
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: 2007 May 62007 May 11

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period07/5/607/5/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Meziani, Y. M., Hanabe, M., Koizumi, A., Ishibashi, T., Uno, T., Otsuji, T., & Sano, E. (2007). Generation of terahertz radiation from a new InGaP/InGaAs/GaAs double grating gate HEMT device. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 [4452774] (Conference on Lasers and Electro-Optics, 2007, CLEO 2007). https://doi.org/10.1109/CLEO.2007.4452774