Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies

Jui Hung Hung; Kazuo Sato; Yi Cheng Fang; Lung Han Peng; Tomomi Nemoto; Hiroyuki Yokoyama

doi:10.7567/APEX.10.102701

Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies

Jui Hung Hung, Kazuo Sato, Yi Cheng Fang, Lung Han Peng, Tomomi Nemoto, Hiroyuki Yokoyama

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have developed a method to generate sub-nanosecond 650-nm-band optical pulses. These pulses have a peak power of 40W and a pulse energy of 13 nJ at a 1-MHz repetition rate. This technology is intended for application in stimulated-emission-depletion microscopy. Our method is based on the pulsed operation of a 1.3-μm-band semiconductor-laser optical amplifier and the second-harmonic generation of the optical pulses after amplification by a Pr-doped fiber amplifier. The resultant peak power and pulse energy of the 650-nm-band optical pulses are two orders of magnitude higher than those directly obtained from a laser diode.

Original language	English
Article number	102701
Journal	Applied Physics Express
Volume	10
Issue number	10
DOIs	https://doi.org/10.7567/APEX.10.102701
Publication status	Published - 2017 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies",

abstract = "We have developed a method to generate sub-nanosecond 650-nm-band optical pulses. These pulses have a peak power of 40W and a pulse energy of 13 nJ at a 1-MHz repetition rate. This technology is intended for application in stimulated-emission-depletion microscopy. Our method is based on the pulsed operation of a 1.3-μm-band semiconductor-laser optical amplifier and the second-harmonic generation of the optical pulses after amplification by a Pr-doped fiber amplifier. The resultant peak power and pulse energy of the 650-nm-band optical pulses are two orders of magnitude higher than those directly obtained from a laser diode.",

author = "Hung, {Jui Hung} and Kazuo Sato and Fang, {Yi Cheng} and Peng, {Lung Han} and Tomomi Nemoto and Hiroyuki Yokoyama",

note = "Funding Information: Acknowledgments This work was supported, in part, by “Brain Mapping by Integrated Neurotechnologies for Disease Studies (Brain=MINDS)” from the Japan Agency for Medical Research and Development (AMED) and the Research Program “Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” in the Network Joint Research Center for Materials and Devices. Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2017",

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doi = "10.7567/APEX.10.102701",

language = "English",

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journal = "Applied Physics Express",

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AU - Hung, Jui Hung

AU - Sato, Kazuo

AU - Fang, Yi Cheng

AU - Peng, Lung Han

AU - Nemoto, Tomomi

AU - Yokoyama, Hiroyuki

N1 - Funding Information: Acknowledgments This work was supported, in part, by “Brain Mapping by Integrated Neurotechnologies for Disease Studies (Brain=MINDS)” from the Japan Agency for Medical Research and Development (AMED) and the Research Program “Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” in the Network Joint Research Center for Materials and Devices. Publisher Copyright: © 2017 The Japan Society of Applied Physics. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/10

Y1 - 2017/10

N2 - We have developed a method to generate sub-nanosecond 650-nm-band optical pulses. These pulses have a peak power of 40W and a pulse energy of 13 nJ at a 1-MHz repetition rate. This technology is intended for application in stimulated-emission-depletion microscopy. Our method is based on the pulsed operation of a 1.3-μm-band semiconductor-laser optical amplifier and the second-harmonic generation of the optical pulses after amplification by a Pr-doped fiber amplifier. The resultant peak power and pulse energy of the 650-nm-band optical pulses are two orders of magnitude higher than those directly obtained from a laser diode.

AB - We have developed a method to generate sub-nanosecond 650-nm-band optical pulses. These pulses have a peak power of 40W and a pulse energy of 13 nJ at a 1-MHz repetition rate. This technology is intended for application in stimulated-emission-depletion microscopy. Our method is based on the pulsed operation of a 1.3-μm-band semiconductor-laser optical amplifier and the second-harmonic generation of the optical pulses after amplification by a Pr-doped fiber amplifier. The resultant peak power and pulse energy of the 650-nm-band optical pulses are two orders of magnitude higher than those directly obtained from a laser diode.

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Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies

Abstract

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