Abstract
We have developed a method to generate sub-nanosecond 650-nm-band optical pulses. These pulses have a peak power of 40W and a pulse energy of 13 nJ at a 1-MHz repetition rate. This technology is intended for application in stimulated-emission-depletion microscopy. Our method is based on the pulsed operation of a 1.3-μm-band semiconductor-laser optical amplifier and the second-harmonic generation of the optical pulses after amplification by a Pr-doped fiber amplifier. The resultant peak power and pulse energy of the 650-nm-band optical pulses are two orders of magnitude higher than those directly obtained from a laser diode.
| Original language | English |
|---|---|
| Article number | 102701 |
| Journal | Applied Physics Express |
| Volume | 10 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2017 Oct |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies'. Together they form a unique fingerprint.
Cite this
Hung, J. H., Sato, K., Fang, Y. C., Peng, L. H., Nemoto, T., & Yokoyama, H. (2017). Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies. Applied Physics Express, 10(10), [102701]. https://doi.org/10.7567/APEX.10.102701