Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots

Yutaka Ohno, Kazuya Tajima, Kentaro Kutsukake, Noritaka Usami

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Three-dimensional distribution of grain boundaries (GBs) and generation sources of dislocation clusters is examined in a cast-grown high-performance multicrystalline silicon ingot for commercial solar cells. A significant number of dislocations are generated nearby some triple junctions of random angle GBs, although it is believed that such non-coherent GBs would not induce large strain during the cast growth. This explosive generation of dislocations would take place when the triple junctions are interacted with multiple Σ3{111} GBs. A segment of the random angle GB connected with a pair of Σ3{111} GBs nearby the triple junction would act as a dislocation source.

Original languageEnglish
Article number105505
JournalApplied Physics Express
Volume13
Issue number10
DOIs
Publication statusPublished - 2020 Oct 6

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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