Generation of argon-ion mixed silicon plasmas forming argon encapsulated silicon clusters

T. Kaneko, H. Takaya, R. Hatakeyama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

An inductively coupled argon (Ar) plasma is superimposed on a silicon (Si) plasma generated by an electron beam gun in order to realize the formation of gas-atom encapsulated Si cage clusters. The Si clusters, which are formed and deposited on a substrate, are analyzed by laser-desorption time-of-flight mass spectrometry and are found to have the mass spectra of not only pure Si cluster (Sin; n=1-17) but also Si cluster doped with Ar atom (Ar Sin; n=10-20) in the case that the large amount of Ar ions is generated in addition to the Si plasma. Together with the analysis of x-ray photoelectron spectroscopy, it is revealed that the Ar atom is included in the Si cluster, forming the structure of endohedral Ar@ Sin complexes. Furthermore, the mass spectrum of Ar@ Sin indicates the existence of the magic numbered cluster size n=15, 16 similar to the metal encapsulated Si clusters.

Original languageEnglish
Article number241501
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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