Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth

Toshinori Taishi, Keigo Hoshikawa, Yutaka Ohno, Ichiro Yonenaga

Research output: Contribution to journalConference articlepeer-review

Abstract

Mechanism of generation and suppression of misfit dislocations in Si bulk crystal growth at the seed/crystal interface is studied. Misfit dislocations in B-doped CZ-Si crystal growth are suppressed when the difference in B concentration between a seed and the grown crystal is at least 9 × 10 18 cm3, corresponding to 4.5 × 105 of misfit strain. Similar misfit strain of 3.4 × 105 was obtained in Ge-doped CZ-Si crystal growth. In the CZ-Si crystal growth, a transition region of impurity concentration with about 40 μm in width is formed at the seed/crystal interface in both dislocation-free and dislocated crystals by diffusion of impurity atoms from the seed. From a macroscopic viewpoint at the seed/crystal interface, the critical misfit strain in Si bulk crystal growth is larger than that in epitaxial growth model in a consideration that the width of the transition region is the critical thickness of the grown layer. We propose a preliminary new mechanism of generation and suppression of misfit dislocations dependent on the local misfit strain at the interface during the growth from a microscopic viewpoint.

Original languageEnglish
Pages (from-to)1886-1891
Number of pages6
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number8
DOIs
Publication statusPublished - 2009 Dec 7
EventInternational Conference on Extended Defects in Semiconductors, EDS 2008 - Poitiers, France
Duration: 2008 Sep 142008 Sep 19

ASJC Scopus subject areas

  • Condensed Matter Physics

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