Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata, Seong Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow, Keisaku Yamada, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi

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