Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata, Seong Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow, Keisaku Yamada, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi

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Abstract

We report that VO cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with V O cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes.

Original languageEnglish
Article number155201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number15
DOIs
Publication statusPublished - 2013 Apr 8
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kamiya, K., Yang, M. Y., Nagata, T., Park, S. G., Magyari-Köpe, B., Chikyow, T., Yamada, K., Niwa, M., Nishi, Y., & Shiraishi, K. (2013). Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories. Physical Review B - Condensed Matter and Materials Physics, 87(15), [155201]. https://doi.org/10.1103/PhysRevB.87.155201