TY - JOUR
T1 - Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
AU - Kamiya, Katsumasa
AU - Yang, Moon Young
AU - Nagata, Takahiro
AU - Park, Seong Geon
AU - Magyari-Köpe, Blanka
AU - Chikyow, Toyohiro
AU - Yamada, Keisaku
AU - Niwa, Masaaki
AU - Nishi, Yoshio
AU - Shiraishi, Kenji
PY - 2013/4/8
Y1 - 2013/4/8
N2 - We report that VO cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with V O cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes.
AB - We report that VO cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with V O cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes.
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U2 - 10.1103/PhysRevB.87.155201
DO - 10.1103/PhysRevB.87.155201
M3 - Article
AN - SCOPUS:84876176112
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 15
M1 - 155201
ER -