General synthetic strategies for III-V nanowires

Jianye Li, Komin Shu

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

III-V semiconductor nanowires are expected to play a significant role in future nanoscale electronic and optoelectronic devices. In this chapter, we attempt to review the general synthetic strategies for III-V compound nanowires. We first summarize various III-V nanowire growth techniques such as chemical vapor deposition, laser ablation, metal-organic chemical vapor deposition, molecular beam epitaxy, chemical beam epitaxy, hydride vapour phase epitaxy, wafer annealing, and low-temperature solution methods. Subsequently, we discuss mechanisms involved to generate III-V nanowires from different synthetic schemes and conditions, including vapor-liquid-solid, vapor-solid-solid, solution-liquid-solid, vapor-solid (self-catalytic, oxide-assisted, and axial screw dislocation), ligand-aided solution-solid, and reactive Si-assisted growth.

Original languageEnglish
Title of host publicationAdvances in III-V Semiconductor Nanowires and Nanodevices
PublisherBentham Science Publishers Ltd.
Pages3-21
Number of pages19
ISBN (Print)9781608054152
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes

Keywords

  • Growth mechanism
  • Growth technique
  • III-V compounds
  • Nanowires
  • Semiconductor
  • Synthetic strategy

ASJC Scopus subject areas

  • Engineering(all)

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