GeH 4 adsorption on Si(0 0 1) at RT: Transfer of H atoms to Si sites and atomic exchange between Si and Ge

Takeshi Murata, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Si(0 0 1) surfaces exposed to various doses of germane (GeH 4 ) at room temperature (RT) have been investigated by using temperature-programmed desorption (TPD) and multiple internal reflection Fourier transform infrared spectroscopy (MIR-FTIR). It is found that all H atoms from GeH 4 molecules are transferred to surface Si atoms on adsorption, and form mainly doubly occupied Si dimers. Ge hydrides and Si higher hydrides rarely exist. These features persist beyond 1 monolayer of the hydrogen coverage. These findings strongly suggest atomic exchange between Ge adatoms and surface Si atoms even at RT. Through analysis of H uptake curve, the number of necessary surface dangling bonds for a GeH 4 molecule adsorption is obtained to be unity at low coverage.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Adsorption
  • CVD
  • Germane
  • Hydrogen
  • Infrared spectroscopy
  • Si(0 0 1)
  • TPD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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