Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition

Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

Original languageEnglish
Pages (from-to)105-110
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2015 Sep 30
Externally publishedYes


  • Gate oxide
  • Germanium
  • Pulsed laser deposition
  • Rutile TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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