Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition

Takahiro Nagata; Kazuyoshi Kobashi; Yoshiyuki Yamashita; Hideki Yoshikawa; Chinnamuthu Paulsamy; Yoshihisa Suzuki; Toshihide Nabatame; Atsushi Ogura; Toyohiro Chikyow

doi:10.1016/j.tsf.2015.08.031

Ge incorporated epitaxy of (110) rutile TiO₂ on (100) Ge single crystal at low temperature by pulsed laser deposition

Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The thin film growth of (110) rutile TiO₂ on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO₂, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO₂ enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO₂ and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	Thin Solid Films
Volume	591
DOIs	https://doi.org/10.1016/j.tsf.2015.08.031
Publication status	Published - 2015 Sep 30
Externally published	Yes

Keywords

Gate oxide
Germanium
Pulsed laser deposition
Rutile TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2015.08.031

Cite this

Ge incorporated epitaxy of (110) rutile TiO₂ on (100) Ge single crystal at low temperature by pulsed laser deposition. / Nagata, Takahiro; Kobashi, Kazuyoshi; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Paulsamy, Chinnamuthu; Suzuki, Yoshihisa; Nabatame, Toshihide; Ogura, Atsushi; Chikyow, Toyohiro.

In: Thin Solid Films, Vol. 591, 30.09.2015, p. 105-110.

Research output: Contribution to journal › Article › peer-review

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title = "Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition",

abstract = "The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.",

keywords = "Gate oxide, Germanium, Pulsed laser deposition, Rutile TiO",

author = "Takahiro Nagata and Kazuyoshi Kobashi and Yoshiyuki Yamashita and Hideki Yoshikawa and Chinnamuthu Paulsamy and Yoshihisa Suzuki and Toshihide Nabatame and Atsushi Ogura and Toyohiro Chikyow",

note = "Funding Information: We are grateful to HiSOR Hiroshima University and JAEA/SPring-8 for the development of HAXPES at BL15XU in SPring-8, and Dr. S. Ueda and Mr. T. Ishimaru for technical support with the HAXPES measurements at BL15XU in SPring-8. The HAXPES measurements were performed with the approval of the NIMS Beamline Station (Proposal No. 2011B4611 and 2012A4613). We are also grateful to Mr. T. Takei for technical support with the TEM observation. WPI-MANA was established by the World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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doi = "10.1016/j.tsf.2015.08.031",

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AU - Nagata, Takahiro

AU - Kobashi, Kazuyoshi

AU - Yamashita, Yoshiyuki

AU - Yoshikawa, Hideki

AU - Paulsamy, Chinnamuthu

AU - Suzuki, Yoshihisa

AU - Nabatame, Toshihide

AU - Ogura, Atsushi

AU - Chikyow, Toyohiro

N1 - Funding Information: We are grateful to HiSOR Hiroshima University and JAEA/SPring-8 for the development of HAXPES at BL15XU in SPring-8, and Dr. S. Ueda and Mr. T. Ishimaru for technical support with the HAXPES measurements at BL15XU in SPring-8. The HAXPES measurements were performed with the approval of the NIMS Beamline Station (Proposal No. 2011B4611 and 2012A4613). We are also grateful to Mr. T. Takei for technical support with the TEM observation. WPI-MANA was established by the World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/9/30

Y1 - 2015/9/30

N2 - The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

AB - The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

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