TY - JOUR
T1 - Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition
AU - Nagata, Takahiro
AU - Kobashi, Kazuyoshi
AU - Yamashita, Yoshiyuki
AU - Yoshikawa, Hideki
AU - Paulsamy, Chinnamuthu
AU - Suzuki, Yoshihisa
AU - Nabatame, Toshihide
AU - Ogura, Atsushi
AU - Chikyow, Toyohiro
N1 - Funding Information:
We are grateful to HiSOR Hiroshima University and JAEA/SPring-8 for the development of HAXPES at BL15XU in SPring-8, and Dr. S. Ueda and Mr. T. Ishimaru for technical support with the HAXPES measurements at BL15XU in SPring-8. The HAXPES measurements were performed with the approval of the NIMS Beamline Station (Proposal No. 2011B4611 and 2012A4613). We are also grateful to Mr. T. Takei for technical support with the TEM observation. WPI-MANA was established by the World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/9/30
Y1 - 2015/9/30
N2 - The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.
AB - The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.
KW - Gate oxide
KW - Germanium
KW - Pulsed laser deposition
KW - Rutile TiO
UR - http://www.scopus.com/inward/record.url?scp=84942011139&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942011139&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2015.08.031
DO - 10.1016/j.tsf.2015.08.031
M3 - Article
AN - SCOPUS:84942011139
VL - 591
SP - 105
EP - 110
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -