Abstract
The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.
Original language | English |
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Pages (from-to) | 105-110 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 591 |
DOIs | |
Publication status | Published - 2015 Sep 30 |
Externally published | Yes |
Keywords
- Gate oxide
- Germanium
- Pulsed laser deposition
- Rutile TiO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry