Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition

Takahiro Nagata; Kazuyoshi Kobashi; Yoshiyuki Yamashita; Hideki Yoshikawa; Chinnamuthu Paulsamy; Yoshihisa Suzuki; Toshihide Nabatame; Atsushi Ogura; Toyohiro Chikyow

doi:10.1016/j.tsf.2015.08.031

Ge incorporated epitaxy of (110) rutile TiO₂ on (100) Ge single crystal at low temperature by pulsed laser deposition

Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The thin film growth of (110) rutile TiO₂ on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO₂, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO₂ enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO₂ and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	Thin Solid Films
Volume	591
DOIs	https://doi.org/10.1016/j.tsf.2015.08.031
Publication status	Published - 2015 Sep 30
Externally published	Yes

Keywords

Gate oxide
Germanium
Pulsed laser deposition
Rutile TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Ge incorporated epitaxy of (110) rutile TiO₂ on (100) Ge single crystal at low temperature by pulsed laser deposition. / Nagata, Takahiro; Kobashi, Kazuyoshi; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Paulsamy, Chinnamuthu; Suzuki, Yoshihisa; Nabatame, Toshihide; Ogura, Atsushi; Chikyow, Toyohiro.

In: Thin Solid Films, Vol. 591, 30.09.2015, p. 105-110.

Research output: Contribution to journal › Article › peer-review

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abstract = "The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.",

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author = "Takahiro Nagata and Kazuyoshi Kobashi and Yoshiyuki Yamashita and Hideki Yoshikawa and Chinnamuthu Paulsamy and Yoshihisa Suzuki and Toshihide Nabatame and Atsushi Ogura and Toyohiro Chikyow",

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AU - Nagata, Takahiro

AU - Kobashi, Kazuyoshi

AU - Yamashita, Yoshiyuki

AU - Yoshikawa, Hideki

AU - Paulsamy, Chinnamuthu

AU - Suzuki, Yoshihisa

AU - Nabatame, Toshihide

AU - Ogura, Atsushi

AU - Chikyow, Toyohiro

PY - 2015/9/30

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N2 - The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

AB - The thin film growth of (110) rutile TiO2 on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO2, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO2 enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO2 and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment.

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KW - Pulsed laser deposition

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