Ge-dot formation on Si(111)-7 × 7 surface with C predeposition using monomethylsilane

Yuzuru Narita, Masashi Sakai, Takeshi Murata, Tetsuo Endoh, Maki Suemitsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 × 7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.

Original languageEnglish
Pages (from-to)L123-L125
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number1-7
DOIs
Publication statusPublished - 2005 May 3

Keywords

  • GSMBE
  • Ge dot
  • Germane
  • Monomethylsilane
  • Si(111 )-7 × 7

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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