Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH 3)4)

M. Ohtake, M. Wada, M. Sugiyama, H. Isshiki, R. Saito, S. Yugo, T. Kimura

Research output: Contribution to journalConference articlepeer-review

Fingerprint Dive into the research topics of 'Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH <sub>3</sub>)<sub>4</sub>)'. Together they form a unique fingerprint.

Physics & Astronomy