Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH 3)4)

M. Ohtake, M. Wada, M. Sugiyama, H. Isshiki, R. Saito, S. Yugo, T. Kimura

Research output: Contribution to journalConference articlepeer-review


Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.

Original languageEnglish
Pages (from-to)1113-1116
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
Publication statusPublished - 2003
Externally publishedYes
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: 2002 Sep 302002 Oct 3

ASJC Scopus subject areas

  • Condensed Matter Physics


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