Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH 3)4)

M. Ohtake; M. Wada; M. Sugiyama; H. Isshiki; R. Saito; S. Yugo; T. Kimura

doi:10.1002/pssc.200303008

Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH ₃)₄)

M. Ohtake, M. Wada, M. Sugiyama, H. Isshiki, R. Saito, S. Yugo, T. Kimura

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.

Original language	English
Pages (from-to)	1113-1116
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200303008
Publication status	Published - 2003 Dec 1
Externally published	Yes
Event	2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: 2002 Sep 30 → 2002 Oct 3

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200303008

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title = "Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH 3)4)",

abstract = "Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.",

author = "M. Ohtake and M. Wada and M. Sugiyama and H. Isshiki and R. Saito and S. Yugo and T. Kimura",

year = "2003",

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doi = "10.1002/pssc.200303008",

language = "English",

pages = "1113--1116",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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number = "4",

note = "2nd International Conference on Semiconductor Quantum Dots, QD 2002 ; Conference date: 30-09-2002 Through 03-10-2002",

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TY - JOUR

T1 - Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH 3)4)

AU - Ohtake, M.

AU - Wada, M.

AU - Sugiyama, M.

AU - Isshiki, H.

AU - Saito, R.

AU - Yugo, S.

AU - Kimura, T.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.

AB - Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.

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U2 - 10.1002/pssc.200303008

DO - 10.1002/pssc.200303008

M3 - Conference article

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EP - 1116

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 4

T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002

Y2 - 30 September 2002 through 3 October 2002

ER -

Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH ₃)₄)

Abstract

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