Abstract
The device performance of solar cells, which was based on multicrystalline (mc) SiGe with microscopic compositional distribution, was investigated. It was observed that a small addition of Ge to mc-Si had increased the short-circuit current density without effecting the the open-circuit voltage. It was also observed that the increament of short circuit photocurrent of mc-SiGe solar cells with microscopic compositional distribution was due to the increased absorption coefficients. It was also observed that the absorption coefficient of mc-SiGe at the wavelength of 600-800 nm was 1.2 times larger than that of mc-Si.
Original language | English |
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Pages (from-to) | 1238-1241 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2004 Jul 15 |
ASJC Scopus subject areas
- Physics and Astronomy(all)