Gate-voltage modulation in graphene

K. Tsukagoshi, H. Miyazaki, S. L. Li, A. Kumatani, H. Hiura, A. Kanda

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

We present a review of our experiments on graphene transistors in its potential use as atomic film switching devices. As the preparation of the bilayer graphene, a quick formation method to precisely confirm the number of layers is required. Fabrication of gate electrodes specialized for the graphene system is also useful in the application of a high electric field in the graphene transistor. In this short review paper, our original method of fabrication and structure of gate electrodes for the graphene transistor will be introduced.

Original languageEnglish
Title of host publicationGraphene and its Fascinating Attributes
PublisherWorld Scientific Publishing Co.
Pages179-187
Number of pages9
ISBN (Electronic)9789814329361
ISBN (Print)9814329355, 9789814329354
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Tsukagoshi, K., Miyazaki, H., Li, S. L., Kumatani, A., Hiura, H., & Kanda, A. (2011). Gate-voltage modulation in graphene. In Graphene and its Fascinating Attributes (pp. 179-187). World Scientific Publishing Co.. https://doi.org/10.1142/9789814329361_0011