We present a review of our experiments on graphene transistors in its potential use as atomic film switching devices. As the preparation of the bilayer graphene, a quick formation method to precisely confirm the number of layers is required. Fabrication of gate electrodes specialized for the graphene system is also useful in the application of a high electric field in the graphene transistor. In this short review paper, our original method of fabrication and structure of gate electrodes for the graphene transistor will be introduced.
|Title of host publication||Graphene and its Fascinating Attributes|
|Publisher||World Scientific Publishing Co.|
|Number of pages||9|
|ISBN (Print)||9814329355, 9789814329354|
|Publication status||Published - 2011 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)