TY - JOUR
T1 - Gate voltage-dependent Aharanov-Bohm experiment in the presence of Rashba spin-orbit interaction
AU - Nitta, J.
AU - Meijer, F.
AU - Narita, Y.
AU - Takayanagi, H.
N1 - Funding Information:
The authors thank Michel Devoret, Can-Ming Hu and Jan Willem Berghuis for their fruitful discussion. They are also indebted to Sunao Ishihara for his encouragement. This work has been partially supported by the Core Research for Evolutional Science and Technology (CREST) of the Japanese Science and Technology Corporation (JST).
PY - 2000/2
Y1 - 2000/2
N2 - We measured gate voltage-dependent Aharonov-Bohm oscillations in an InGaAs-based two-dimensional electron gas ring with a gate on top of one of the branches. After ensemble averaging, the h/e oscillation spectrum showed smooth oscillatory behavior as a function of the gate voltage. This could be a manifestation of the spin-orbit interaction induced interference.
AB - We measured gate voltage-dependent Aharonov-Bohm oscillations in an InGaAs-based two-dimensional electron gas ring with a gate on top of one of the branches. After ensemble averaging, the h/e oscillation spectrum showed smooth oscillatory behavior as a function of the gate voltage. This could be a manifestation of the spin-orbit interaction induced interference.
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U2 - 10.1016/S1386-9477(99)00161-7
DO - 10.1016/S1386-9477(99)00161-7
M3 - Conference article
AN - SCOPUS:0034138554
VL - 6
SP - 318
EP - 321
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1
T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)
Y2 - 1 August 1999 through 6 August 1999
ER -