Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes

Akinobu Kanda; Kazuhito Tsukagoshi; Yoshinobu Aoyagi; Youiti Ootuka

Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes

Akinobu Kanda, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Youiti Ootuka

Research output: Contribution to journal › Article › peer-review

Abstract

The gate-voltage dependence of zero-bias anomalies (ZBA) in vanadium (V)/multiwall carbon nanotube (MWNT)/V structure was analyzed. It was shown that as temperature is reduced, the conductance decreases with a functional form consistent with a power law. It was found that the exponent depends significantly on gate voltage and this exponent dependence cannot be explained by Luttinger-liquid (LL) theory for ballistic MWNTs. The obtained results were interpreted within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.

Original language	English
Article number	036801
Pages (from-to)	368011-368014
Number of pages	4
Journal	Physical review letters
Volume	92
Issue number	3
Publication status	Published - 2004 Jan 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The gate-voltage dependence of zero-bias anomalies (ZBA) in vanadium (V)/multiwall carbon nanotube (MWNT)/V structure was analyzed. It was shown that as temperature is reduced, the conductance decreases with a functional form consistent with a power law. It was found that the exponent depends significantly on gate voltage and this exponent dependence cannot be explained by Luttinger-liquid (LL) theory for ballistic MWNTs. The obtained results were interpreted within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.",

author = "Akinobu Kanda and Kazuhito Tsukagoshi and Yoshinobu Aoyagi and Youiti Ootuka",

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AU - Kanda, Akinobu

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

AU - Ootuka, Youiti

PY - 2004/1/23

Y1 - 2004/1/23

N2 - The gate-voltage dependence of zero-bias anomalies (ZBA) in vanadium (V)/multiwall carbon nanotube (MWNT)/V structure was analyzed. It was shown that as temperature is reduced, the conductance decreases with a functional form consistent with a power law. It was found that the exponent depends significantly on gate voltage and this exponent dependence cannot be explained by Luttinger-liquid (LL) theory for ballistic MWNTs. The obtained results were interpreted within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.

AB - The gate-voltage dependence of zero-bias anomalies (ZBA) in vanadium (V)/multiwall carbon nanotube (MWNT)/V structure was analyzed. It was shown that as temperature is reduced, the conductance decreases with a functional form consistent with a power law. It was found that the exponent depends significantly on gate voltage and this exponent dependence cannot be explained by Luttinger-liquid (LL) theory for ballistic MWNTs. The obtained results were interpreted within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.

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Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes

Abstract

ASJC Scopus subject areas

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