Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes

Akinobu Kanda, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Youiti Ootuka

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)


The gate-voltage dependence of zero-bias anomalies (ZBA) in vanadium (V)/multiwall carbon nanotube (MWNT)/V structure was analyzed. It was shown that as temperature is reduced, the conductance decreases with a functional form consistent with a power law. It was found that the exponent depends significantly on gate voltage and this exponent dependence cannot be explained by Luttinger-liquid (LL) theory for ballistic MWNTs. The obtained results were interpreted within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.

Original languageEnglish
Article number036801
Pages (from-to)368011-368014
Number of pages4
JournalPhysical review letters
Issue number3
Publication statusPublished - 2004 Jan 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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