Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes

Akinobu Kanda, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Youiti Ootuka

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Temperature dependence of zero-bias conductance of the vanadium (V)/multiwall carbon nanotube (MWNT)/V structure is studied. As temperature is reduced, the conductance decreases with a functional form consistent with a power law. For the first time, we find that the exponent depends significantly on gate voltage. This exponent dependence cannot be explained by Luttinger-liquid theory for ballistic MWNTs. We interpret the obtained results within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.

Original languageEnglish
Number of pages1
JournalPhysical review letters
Volume92
Issue number3
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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