Abstract
We fabricated laterally coupled vertical double-dot devices and measured their electrical transport properties. In these devices, two dots are laterally coupled in parallel and connected to a common source, and drain contacts placed above, and below the two dots. The number of electrons in each dot and the inter-dot tunnel coupling are all tunable. The inter-dot tunnel coupling was changed between the weak and strong coupling regimes, as a function of gate voltage placed between two dots. When a magnetic field was applied parallel to the plane of the two dots and source/drain contacts, we observed oscillations of the current (Aharanov-Bohm oscillation) in the weak coupling regime (for a different device).
Original language | English |
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Pages (from-to) | 534-537 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 22 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 Apr 1 |
Externally published | Yes |
Event | 15th International Conference on ELectronic Propreties - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18 |
Keywords
- Aharanov-Bohm oscillation
- Tunnel coupling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics