Gate-voltage dependence of inter dot coupling and Aharanov-Bohm oscillation in laterally coupled vertical double dot

Tsuyoshi Hatano, Michael Stopa, Wataru Izumida, Tomohiro Yamaguchi, Takeshi Ota, Seigo Tarucha

Research output: Contribution to journalConference articlepeer-review

21 Citations (Scopus)

Abstract

We fabricated laterally coupled vertical double-dot devices and measured their electrical transport properties. In these devices, two dots are laterally coupled in parallel and connected to a common source, and drain contacts placed above, and below the two dots. The number of electrons in each dot and the inter-dot tunnel coupling are all tunable. The inter-dot tunnel coupling was changed between the weak and strong coupling regimes, as a function of gate voltage placed between two dots. When a magnetic field was applied parallel to the plane of the two dots and source/drain contacts, we observed oscillations of the current (Aharanov-Bohm oscillation) in the weak coupling regime (for a different device).

Original languageEnglish
Pages (from-to)534-537
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004 Apr
Externally publishedYes
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Aharanov-Bohm oscillation
  • Tunnel coupling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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