Gate voltage control of nuclear spin relaxation in GaAs quantum well

M. Ono, S. Matsuzaka, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

Abstract

Gate-voltage dependences of nuclear spin relaxation and decoherence times in a Schottky-gated n-GaAs/AlGaAs (110) quantum well (QW) are investigated by time-resolved Kerr-rotation measurements combined with pulsed-rf nuclear magnetic resonance (NMR). We show that the nuclear spin relaxation and decoherence times decrease with decreasing electron density, indicating that the hyperfine interaction is enhanced as the electronic states becomes localized in an impurity-doped QW.

Original languageEnglish
Pages (from-to)131-133
Number of pages3
JournalJournal of Superconductivity and Novel Magnetism
Volume23
Issue number1
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Dynamic nuclear polarization
  • Nuclear magnetic resonance
  • Semiconductor spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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