Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles

Tran Thi Thu Huong; Kazuhiko Matsumoto; Masataka Moriya; Hiroshi Shimada; Yasuo Kimura; Ayumi Hirano-Iwata; Yoshinao Mizugaki

doi:10.1007/s00339-017-0891-8

Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles

Tran Thi Thu Huong, Kazuhiko Matsumoto, Masataka Moriya, Hiroshi Shimada, Yasuo Kimura, Ayumi Hirano-Iwata, Yoshinao Mizugaki

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We fabricated a single-electron (SE) device using gold nanoparticles (Au NPs). Drain, source, and gate electrodes on a SiO₂/Si substrate were formed using electron beam lithography (EBL) and thermal evaporation of Au. Subsequently, solutions of 3-nm-diameter and 5-nm-diameter Au NPs were dropped on the device to make current paths through Au NPs among the electrodes. Measurements of the device exhibited negative differential resistance (NDR) in the current–voltage characteristics between the drain and source electrodes at room temperature (298 K). The NDR behavior was tuned by applying a gate voltage.

Original language	English
Article number	268
Journal	Applied Physics A: Materials Science and Processing
Volume	123
Issue number	4
DOIs	https://doi.org/10.1007/s00339-017-0891-8
Publication status	Published - 2017 Apr 1

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles. / Huong, Tran Thi Thu; Matsumoto, Kazuhiko; Moriya, Masataka; Shimada, Hiroshi; Kimura, Yasuo; Hirano-Iwata, Ayumi; Mizugaki, Yoshinao.

In: Applied Physics A: Materials Science and Processing, Vol. 123, No. 4, 268, 01.04.2017.

Research output: Contribution to journal › Article › peer-review

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