Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles

Tran Thi Thu Huong, Kazuhiko Matsumoto, Masataka Moriya, Hiroshi Shimada, Yasuo Kimura, Ayumi Hirano-Iwata, Yoshinao Mizugaki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We fabricated a single-electron (SE) device using gold nanoparticles (Au NPs). Drain, source, and gate electrodes on a SiO2/Si substrate were formed using electron beam lithography (EBL) and thermal evaporation of Au. Subsequently, solutions of 3-nm-diameter and 5-nm-diameter Au NPs were dropped on the device to make current paths through Au NPs among the electrodes. Measurements of the device exhibited negative differential resistance (NDR) in the current–voltage characteristics between the drain and source electrodes at room temperature (298 K). The NDR behavior was tuned by applying a gate voltage.

Original languageEnglish
Article number268
JournalApplied Physics A: Materials Science and Processing
Volume123
Issue number4
DOIs
Publication statusPublished - 2017 Apr 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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