Gate-tunable gigantic lattice deformation in VO2

D. Okuyama, Masaki Nakano, S. Takeshita, H. Ohsumi, S. Tardif, K. Shibuya, T. Hatano, H. Yumoto, T. Koyama, H. Ohashi, M. Takata, M. Kawasaki, T. Arima, Y. Tokura, Y. Iwasa

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25 Citations (Scopus)

Abstract

We examined the impact of electric field on crystal lattice of vanadium dioxide (VO2) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO2 decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

Original languageEnglish
Article number023507
JournalApplied Physics Letters
Volume104
Issue number2
DOIs
Publication statusPublished - 2014 Jan 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Okuyama, D., Nakano, M., Takeshita, S., Ohsumi, H., Tardif, S., Shibuya, K., Hatano, T., Yumoto, H., Koyama, T., Ohashi, H., Takata, M., Kawasaki, M., Arima, T., Tokura, Y., & Iwasa, Y. (2014). Gate-tunable gigantic lattice deformation in VO2. Applied Physics Letters, 104(2), [023507]. https://doi.org/10.1063/1.4861901