Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability

Soshi Sato, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

Gate semi-around silicon nanowire (SiNW) FETs have been fabricated and their electrical characteristics, especially on the drivability, have been assessed for future high performance devices. Among different wire size, a SiNW FET with a cross-section of 12×19 nm2 has shown an improvement in the on-current (ION) when normalized by the channel peripheral length. A high ION over 1600 μA/μm at an overdrive voltage of 1 V has been achieved with a gate length and an oxide thickness of 65 and 3 nm, respectively. The origin of the high drivability has been speculated by higher carrier density, improved carrier mobility and the reduction in the series resistance.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages361-364
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Publication series

Name2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Other

Other2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period10/9/1410/9/16

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Sato, S., Lee, Y., Kakushima, K., Ahmet, P., Ohmori, K., Natori, K., Yamada, K., & Iwai, H. (2010). Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 361-364). [5618212] (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618212