Abstract
Two gate drive units have been developed for use with 2.5kV-2kA or 4.5V-3kA reverse conducting gate turn-off (GTO) thyristors connected in series. Some technical problems connected with driving GTO-thyristor series-connected modules are clarified. New circuits for realizing indirect optical GTO-thyristor drive, constant on-gate current output, and protection of the gate drive units against GTO-thyristor failure have been designed.
| Original language | English |
|---|---|
| Pages (from-to) | 763-768 |
| Number of pages | 6 |
| Journal | PESC Record - IEEE Annual Power Electronics Specialists Conference |
| Volume | 2 |
| Publication status | Published - 1990 Dec 1 |
| Externally published | Yes |
| Event | 21st Annual IEEE Power Electronics Specialists Conference - PESC '90 Part 2 (of 2) - San Antonio, TX, USA Duration: 1990 Jun 11 → 1990 Jun 14 |
ASJC Scopus subject areas
- Modelling and Simulation
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering