Gate drive circuits for high voltage, large current GTO-thyristors connected in series

Hideo Saotome, Yoshikazu Takahashi

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

Two gate drive units have been developed for use with 2.5kV-2kA or 4.5V-3kA reverse conducting gate turn-off (GTO) thyristors connected in series. Some technical problems connected with driving GTO-thyristor series-connected modules are clarified. New circuits for realizing indirect optical GTO-thyristor drive, constant on-gate current output, and protection of the gate drive units against GTO-thyristor failure have been designed.

Original languageEnglish
Pages (from-to)763-768
Number of pages6
JournalPESC Record - IEEE Annual Power Electronics Specialists Conference
Volume2
Publication statusPublished - 1990 Dec 1
Externally publishedYes
Event21st Annual IEEE Power Electronics Specialists Conference - PESC '90 Part 2 (of 2) - San Antonio, TX, USA
Duration: 1990 Jun 111990 Jun 14

ASJC Scopus subject areas

  • Modelling and Simulation
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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