Gate-controlled persistent spin helix state in (In,Ga)As quantum wells

M. Kohda, V. Lechner, Y. Kunihashi, T. Dollinger, P. Olbrich, C. Schönhuber, I. Caspers, V. V. Bel'Kov, L. E. Golub, D. Weiss, K. Richter, J. Nitta, S. D. Ganichev

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81 Citations (Scopus)

Abstract

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, α and β, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine a ratio α/β 1 for nongated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magnetotransport experiment, we monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH-type state. A corresponding numerical analysis reveals that such a PSH-type state indeed prevails even in presence of strong cubic SOI, however no longer at α=β.

Original languageEnglish
Article number081306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number8
DOIs
Publication statusPublished - 2012 Aug 27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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