Gate-controlled P-I-N junction switching device with graphene nanoribbon

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Hisao Miyazaki, Songlin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


A graphene P-I-N junction switching device with a nanoribbon is proposed, which was aimed at finding an optimized operation scheme for graphene transistors. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon that works as an insulator, resulting in a junction configuration of (P or N)-I-(P or N). It is demonstrated that the drain current modulation strongly depends on the junction configuration, while the nanoribbon is not directly top-gated, and that the device with a P-I-N or N-I-P junction can exhibit better switching properties.

Original languageEnglish
Article number015101
JournalApplied Physics Express
Issue number1
Publication statusPublished - 2012 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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