Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

Junsaku Nitta, Yiping Lin, Tatsushi Akazaki, Takaaki Koga

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.

Original languageEnglish
Pages (from-to)4565-4567
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2003 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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