Abstract
The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.
Original language | English |
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Pages (from-to) | 4565-4567 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2003 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)