Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

Junsaku Nitta; Yiping Lin; Tatsushi Akazaki; Takaaki Koga

doi:10.1063/1.1631082

Gate-controlled electron g factor in an InAs-inserted-channel In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure

Junsaku Nitta, Yiping Lin, Tatsushi Akazaki, Takaaki Koga

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.

Original language	English
Pages (from-to)	4565-4567
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1631082
Publication status	Published - 2003 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure",

abstract = "The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.",

author = "Junsaku Nitta and Yiping Lin and Tatsushi Akazaki and Takaaki Koga",

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AU - Nitta, Junsaku

AU - Lin, Yiping

AU - Akazaki, Tatsushi

AU - Koga, Takaaki

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.

AB - The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.

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DO - 10.1063/1.1631082

M3 - Article

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Gate-controlled electron g factor in an InAs-inserted-channel In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure

Abstract

ASJC Scopus subject areas

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