Abstract
The angle dependence of magnetotransport properties was investigated in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of the g factor was obtained from the coincidence method.
| Original language | English |
|---|---|
| Pages (from-to) | 4565-4567 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2003 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Nitta, J., Lin, Y., Akazaki, T., & Koga, T. (2003). Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. Applied Physics Letters, 83(22), 4565-4567. https://doi.org/10.1063/1.1631082