We have investigated gate voltage dependence of the Rashba spin-orbit interaction (SOI) in an In0.52Al0.48As/5nm In 0.8Ga0.2As/InP narrow quantum well by using weak antilocalization analysis. As the gate voltage increases, clear crossover transition from weak localization to weak antilocalization is observed in the identical sample, which indicates that strength of the Rashba SOI systematically changes. Rashba SOI parameter α is found to increase with carrier density, which is in agreement with the calculated values from the k.p theory. By comparing the obtained Rashba parameter α with the calculated interface and field contributions, combination of In0.8Ga0.2As/InP interface and In0.8Ga0.2As field contributions determines the variation of the Rashba SOI with gate bias voltage.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006 Dec 1|
|Event||4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan|
Duration: 2006 Aug 15 → 2006 Aug 18
ASJC Scopus subject areas
- Condensed Matter Physics