Gate controlled crossover from weak localization to weak antilocalization in a narrow gap In0.8Ga0.2As/InP heterostmcture

Takayuki Nihei, Yoshifumi Suzuki, Makoto Koda, Junsaku Nitta

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9 Citations (Scopus)


We have investigated gate voltage dependence of the Rashba spin-orbit interaction (SOI) in an In0.52Al0.48As/5nm In 0.8Ga0.2As/InP narrow quantum well by using weak antilocalization analysis. As the gate voltage increases, clear crossover transition from weak localization to weak antilocalization is observed in the identical sample, which indicates that strength of the Rashba SOI systematically changes. Rashba SOI parameter α is found to increase with carrier density, which is in agreement with the calculated values from the k.p theory. By comparing the obtained Rashba parameter α with the calculated interface and field contributions, combination of In0.8Ga0.2As/InP interface and In0.8Ga0.2As field contributions determines the variation of the Rashba SOI with gate bias voltage.

Original languageEnglish
Pages (from-to)4239-4242
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number12
Publication statusPublished - 2006 Dec 1
Event4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan
Duration: 2006 Aug 152006 Aug 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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